MATERIAL
| Technical Parameter of Reaction Bonded Silicon Carbide | |
| item | data |
| SiC content | 92-93% |
| Silicon content | 6-7% |
| temperature of application | 1380℃ |
| density | >=3.02g/cm3 |
| open porosity | <0.1% |
| bending strength | 250Mpa(20centigrade), 280Mpa(1200centigrade) |
| modulus of elasticity | 330Gpa(20centigrade), 300Gpa(1200centigrade) |
| thermal conductivity | 45W/m.k(1200centigrade) |
| coefficient of thermal expansion | 4.5K-1*10-6 |
| Mohs hardness | 13 |
| Acid and alkali resistance | Excellent |
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