Technical Parameter of Reaction Bonded Silicon Carbide | |
item | data |
SiC content | 92-93% |
Silicon content | 6-7% |
temperature of application | 1380℃ |
density | >=3.02g/cm3 |
open porosity | <0.1% |
bending strength | 250Mpa(20centigrade), 280Mpa(1200centigrade) |
modulus of elasticity | 330Gpa(20centigrade), 300Gpa(1200centigrade) |
thermal conductivity | 45W/m.k(1200centigrade) |
coefficient of thermal expansion | 4.5K-1*10-6 |
Mohs hardness | 13 |
Acid and alkali resistance | Excellent |