MATERIAL

Technical Parameter of Reaction Bonded Silicon Carbide
item data
SiC content 92-93%
Silicon content 6-7%
temperature of application 1380
density >=3.02g/cm3
open porosity <0.1%
bending strength 250Mpa(20centigrade), 280Mpa(1200centigrade)
modulus of elasticity 330Gpa(20centigrade), 300Gpa(1200centigrade)
   
thermal conductivity 45W/m.k(1200centigrade)
coefficient of thermal expansion 4.5K-1*10-6
Mohs hardness 13
Acid and alkali resistance Excellent
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